Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

Table 1

Proportion of elements in the α-HfIZO active layer.

El	AN	Series	unn. 𝐶 [wt.%]	norm. 𝐶 [wt.%]	Atom. 𝐶 [at.%]	Error [wt.%]
O	8	K-series	13.35	13.01	57.13	2.9
Hf	72	M-series	59.17	57.65	22.69	2.7
In	49	L-series	25.13	24.48	14.98	1.1
Zn	30	L-series	4.98	4.85	5.21	0.4
		Total:	102.62	100.00	100.00