Research Article
Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors
Table 1
Proportion of elements in the α-HfIZO active layer.
| El | AN | Series | unn. [wt.%] | norm. [wt.%] | Atom. [at.%] | Error [wt.%] |
| O | 8 | K-series | 13.35 | 13.01 | 57.13 | 2.9 | Hf | 72 | M-series | 59.17 | 57.65 | 22.69 | 2.7 | In | 49 | L-series | 25.13 | 24.48 | 14.98 | 1.1 | Zn | 30 | L-series | 4.98 | 4.85 | 5.21 | 0.4 |
| | | Total: | 102.62 | 100.00 | 100.00 | |
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