Evaluation of CdS Interfacial Layers in ZnO Nanowire/Poly(3-Hexylthiophene) Solar Cells
Figure 2
Lateral (top) and cross-section (bottom) SEM images of ZnO nanowires grown for 10 hours, approximately 2000 nm tall, with no interlayer (left), 1-dip CdS (middle), and 3-dip CdS (right) interlayers. The top 100 nm scale bar is for the lateral images, and the bottom 1000 nm scale bar is for the cross-section images.
