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Journal of Nanomaterials
Volume 2012 (2012), Article ID 263679, 6 pages
http://dx.doi.org/10.1155/2012/263679
Research Article

Effect of Annealing on the Structure and Photoluminescence of Eu-Doped ZnO Nanorod Ordered Array Thin Films

1Department of Physics, Taizhou University, Taizhou 318000, China
2Department of Vessel Engineering, Wuhan Institute of Shipbuilding Technology, Wuhan 430050, China
3Department of Physics, Yantai University, Yantai 264005, China

Received 18 October 2012; Accepted 7 December 2012

Academic Editor: Yue Li

Copyright © 2012 Wen-Wu Zhong et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Eu-doped ZnO nanorod ordered array thin films were synthesized on glass substrates with a ZnO seed layer via hydrothermal method. XRD reveals that the (002) diffraction peak of films annealed in hydrogen is sharper than that annealed in air. SEM reveals that the nanorods of films annealed in hydrogen are shortened and widened. TEM results demonstrate that the nanorods are single crystalline and the lattice spacing of 0.52 nm agrees with the spacing of (001) crystal planes along -axis. Room temperature photoluminescence (PL) reveals that the PL of films annealed in hydrogen is the strongest and shifts to lower wavenumber. The point defect of Eu-doped ZnO nanorod array thin film is transferred from to by annealing in hydrogen.