The Low-Temperature Crystallization and Interface Characteristics of ZnInSnO/In Films Using a Bias-Crystallization Mechanism

Figure 5

(a) TEM and SAED images of unbiased ZITO/In sample, (b) the profile of oxygen, zinc, indium, and tin contents from point A to B in (a); (c) TEM and SAED images of the ZITO/In sample with the biased of 4 V for 20 min, (d) the profile of oxygen, zinc, indium, and tin contents from point C to D in (c). (D. L.: diffusion layer).