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Journal of Nanomaterials
Volume 2012 (2012), Article ID 452310, 5 pages
http://dx.doi.org/10.1155/2012/452310
Research Article

GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlN/AlGaN Buffer Layer

Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan

Received 30 May 2012; Revised 12 November 2012; Accepted 26 November 2012

Academic Editor: Yong Yang

Copyright © 2012 Sheng-Po Chang. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Sheng-Po Chang, “GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlN/AlGaN Buffer Layer,” Journal of Nanomaterials, vol. 2012, Article ID 452310, 5 pages, 2012. doi:10.1155/2012/452310