GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlN/AlGaN Buffer Layer

<table>Dark <i>I-V</i> characteristics of the Schottky diode with TiW contact electrodes.</table>

Journal of Nanomaterials

Figure 2: GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlN/AlGaN Buffer Layer 