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Journal of Nanomaterials
Volume 2012 (2012), Article ID 452310, 5 pages
GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlN/AlGaN Buffer Layer
Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
Received 30 May 2012; Revised 12 November 2012; Accepted 26 November 2012
Academic Editor: Yong Yang
Copyright © 2012 Sheng-Po Chang. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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