Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study

<table>Comparison of the output characteristics (<svg height="14.3875" id="M54" style="vertical-align:-3.25792pt" version="1.1" viewbox="0 0 45.849998 14.3875" width="45.849998" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,14.3875)">
<g transform="translate(72,-60.49)">
<text transform="matrix(1,0,0,-1,-71.95,63.79)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝐼</tspan>
</text>
<text transform="matrix(1,0,0,-1,-65.95,60.66)">
<tspan style="font-size: 8.75px; " x="0" y="0">𝐷</tspan>
</text>
<text transform="matrix(1,0,0,-1,-58.41,63.79)">
<tspan style="font-size: 12.50px; " x="0" y="0">-</tspan>
<tspan style="font-size: 12.50px; " x="4.1634989" y="0">𝑉</tspan>
</text>
<text transform="matrix(1,0,0,-1,-47.05,60.66)">
<tspan style="font-size: 8.75px; " x="0" y="0">D</tspan>
<tspan style="font-size: 8.75px; " x="6.318944" y="0">S</tspan>
</text>
</g>
</g>
</svg>) of the CNTFET in 250 and 500 K for different gate biases.</table>

Journal of Nanomaterials

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Figure 3

Figure 3: Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study 