Luminescence Properties of Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing

Figure 1

(a) SiO_𝑥-layer-thickness-dependent PL spectra for single-layer (SL) Si NCs with 𝑥=1.4. (b) PL peak shifts as functions of SiO_𝑥-layer thickness at each 𝑥 [21, 26].

(a)

(b)