Luminescence Properties of Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing

<table>PL spectra of <svg height="14.8" id="M44" style="vertical-align:-3.21404pt" version="1.1" viewbox="0 0 31.0875 14.8" width="31.0875" xmlns="http://www.w3.org/2000/svg">
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</svg>/SiO<sub>2</sub> MLs after annealing at 1100°C for various thicknesses of the <svg height="14.8" id="M45" style="vertical-align:-3.21404pt" version="1.1" viewbox="0 0 31.0875 14.8" width="31.0875" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,14.8)">
<g transform="translate(72,-60.16)">
<text transform="matrix(1,0,0,-1,-71.95,63.41)">
<tspan style="font-size: 12.50px; " x="0" y="0">S</tspan>
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</svg> layer [<a href="/journals/jnm/2012/572746/#B21">21</a>].</table>

Journal of Nanomaterials

fig2

Figure 2

Figure 2: Luminescence Properties of Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing 