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Journal of Nanomaterials
Volume 2012 (2012), Article ID 748639, 5 pages
http://dx.doi.org/10.1155/2012/748639
Research Article

Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons

“Materials and Devices for Electronics and Optoelectronics” Research Center, Faculty of Physics, University of Bucharest, P.O. Box MG-11, Magurele-Ilfov 077125, Romania

Received 2 August 2012; Accepted 3 September 2012

Academic Editor: Yong Guo

Copyright © 2012 G. A. Nemnes. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The spin transport properties are investigated by means of the first principle approach for boron nitride nanoribbons with one or two substitutional Mn impurities, connected to graphene electrodes. The spin current polarization is evaluated using the nonequilibrium Green’s function formalism for each structure and bias. The structure with one Mn impurity reveals a transfer characteristics suitable for a spin current switch. In the case of two Mn impurities, the system behaves as an efficient spin-filter device, independent on the ferromagnetic or antiferromagnetic configurations of the magnetic impurities. The experimental availability of the building blocks as well as the magnitudes of the obtained spin current polarizations indicates a strong potential of the analyzed structures for future spintronic devices.