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Journal of Nanomaterials
Volume 2012 (2012), Article ID 853021, 5 pages
http://dx.doi.org/10.1155/2012/853021
Research Article

Study of High Quality Indium Nitride Films Grown on Si(100) Substrate by RF-MOMBE with GZO and AlN Buffer Layers

1Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Road VI, Hsinchu Science Park, Hsinchu, 30076, Taiwan
2Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan

Received 17 September 2012; Revised 22 November 2012; Accepted 22 November 2012

Academic Editor: Li Li

Copyright © 2012 Wei-Chun Chen and Shou-Yi Kuo. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Wei-Chun Chen and Shou-Yi Kuo, “Study of High Quality Indium Nitride Films Grown on Si(100) Substrate by RF-MOMBE with GZO and AlN Buffer Layers,” Journal of Nanomaterials, vol. 2012, Article ID 853021, 5 pages, 2012. doi:10.1155/2012/853021