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Journal of Nanomaterials
Volume 2012 (2012), Article ID 853021, 5 pages
doi:10.1155/2012/853021
Study of High Quality Indium Nitride Films Grown on Si(100) Substrate by RF-MOMBE with GZO and AlN Buffer Layers
1Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Road VI, Hsinchu Science Park, Hsinchu, 30076, Taiwan
2Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan
Received 17 September 2012; Revised 22 November 2012; Accepted 22 November 2012
Academic Editor: Li Li
Copyright © 2012 Wei-Chun Chen and Shou-Yi Kuo. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
How to Cite this Article
Wei-Chun Chen and Shou-Yi Kuo, “Study of High Quality Indium Nitride Films Grown on Si(100) Substrate by RF-MOMBE with GZO and AlN Buffer Layers,” Journal of Nanomaterials, vol. 2012, Article ID 853021, 5 pages, 2012. doi:10.1155/2012/853021