On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

Table 1

Compositional results of SRO annealed at 1,100^°C (TT) and as-deposited.

Ro	TT; 1100^°C	XPS; Si excess at.%	XPS; 𝑥=𝑂/𝑆𝑖	RBS; Si excess at.%	RBS; 𝑥=𝑂/𝑆𝑖	AFM; Roughness (nm)
30	No	4.54	1.61	5	1.605	8
30	Yes	4.21	1.63	NA	NA	5
20	No	5.38	1.54	7	1.475	10
20	Yes	5.09	1.54	NA	NA	6
10	No	13.50	1.09	NA	NA	17
10	Yes	14.50	1.01	NA	NA	24