On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

Table 2

Concentration of oxidation states for the SRO samples according to the random bonding model.

Oxidation state	Ro=30	𝑅=20	𝑅=10
SiO2 %	47.35	42.89	45.86
Si2O3 %	23.04	29.39	19.42
SiO %	19.57	18.23	13.02
Si2O %	7.94	6.65	10.53
Elemental Si %	2.10	2.84	11.18