Thermal Stability of Neodymium Aluminates High-κ Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors
Figure 2
TEM image of the as-deposited and 950°C PDA NdAlOx/SiO2 stacks shows the thicknesses of oxide layers change from 1.5 nm/11 nm to 2.5 nm/10.4 nm, respectively.
