Research Article

Thermal Stability of Neodymium Aluminates High-κ Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors

Figure 4

Leakage current density ( 𝐽 ) versus electric field (Eox) applied across the NdAlOx/SiO2 stacks as a function of PDA temperatures. The NdAlOx films thickness was 𝑡 h i g h 𝜅 ~ 10.4 to 11 nm.
891079.fig.004