912903.fig.002
Figure 2: Formation energy of Si NCs doped with P in a variety of configurations. Among P configurations at the NC surface, only those with the formation energy of Si NCs smaller than that of a Si NC doped with P2′ are presented. They are , , , , , and . Internal substitutional P atoms from subsurface to the NC center (2 (2′) → 3 (3′) → 4 (4′) → 5 → 6) are all shown. (Adapted from [36].)