Doping Silicon Nanocrystals with Boron and Phosphorus
Figure 8
Oscillator strengths of the defect-related electronic transitions that fall in the infrared region. The defect energy levels are obtained by the optimization of a Si NC with two P atoms in the configurations considered in Figure 7. The red fitting line gives with a standard deviation of 0.4 in the power ( is oscillator strength and is wavelength). (Reprinted from [36] copyright 2011 American Chemical Society.)
