Research Article
Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE
Table 1
The growth parameters of ZnO thin film samples.
| | sample | HT-ZnO growth temperature (°C) | HT-ZnO growth conditions | HT-ZnO thickness (nm) | LT-ZnO | Buffer layer |
| | A | 600 | O2-rich | 600 | 500°C 6 nm | N/A | | B | 600 | O2-rich | 250 | 300°C 10 nm | 1000°C 2 μm GaN | | C | 600 | O2-rich | 400 | 300°C 10 nm | 550°C 7 nm MgO | | D | 600 | O2-rich | 100 | 300°C 18 nm | 550°C 7 nm MgO | | E | 600 | Zn : O2 = 1 : 1 | 100 | 300°C 10 nm | 550°C 7 nm MgO |
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