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Journal of Nanomaterials
Volume 2012 (2012), Article ID 946868, 9 pages
Research Article

Polarization Dependence of Surface Enhanced Raman Scattering on a Single Dielectric Nanowire

Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, USA

Received 15 June 2012; Accepted 8 September 2012

Academic Editor: Steve F. A. Acquah

Copyright © 2012 Hua Qi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Our measurements of surface enhanced Raman scattering (SERS) on Ga2O3 dielectric nanowires (NWs) core/silver composites indicate that the SERS enhancement is highly dependent on the polarization direction of the incident laser light. The polarization dependence of the SERS signal with respect to the direction of a single NW was studied by changing the incident light angle. Further investigations demonstrate that the SERS intensity is not only dependent on the direction and wavelength of the incident light, but also on the species of the SERS active molecule. The largest signals were observed on an NW when the incident 514.5 nm light was polarized perpendicular to the length of the NW, while the opposite phenomenon was observed at the wavelength of 785 nm. Our theoretical simulations of the polarization dependence at 514.5 nm and 785 nm are in good agreement with the experimental results.