Table 3: Different methods for preparing CVD SiC.

MethodsAdvantages and disadvantagesExample

APCVDThe process is simple and has fast response, but with poor uniformity Chung and Kim [13] use APCVD growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films. The 3C-SiC film had a very good crystal quality without twins, defects, or dislocations, and a very low residual stress

LPCVDIt is possible to grow thin films with uniform and smooth morphology during the 3C-SiC film growth. LPCVD has disadvantages of low growth rate Clavaguera-Mora et al. [14] have used Si (CH3)4 as the source materials to deposit SiC film by hot CVD device. Films grown at 900–980°C are amorphous with nanocrystals of mean grain size 10 nm and have smooth surfaces. Surface profilometry measurements give a root mean square roughness (RMS) of 6 nm

PECVDSubstrate temperature is low and deposition rate is fast. SiC films deposited by PECVD appeared to be in an amorphous state Novi et al. [15] have used PECVD to prepare amorphous SiC, and there has been a lot of cubic structures on the surface, which indicates the existence of polycrystalline structures