Influence of Electric Field Coupling Model on the Simulated Performances of a GaN Based Planar Nanodevice
Figure 1
Schematic top view (a) and side view (b) of the simulated SSD (not to scale). The gray areas and the white area in the top view represent insulating trenches and 2DEG, respectively. An interface of GaN/AlGaN heterostructures in (b) is just 30 nm below the device surface, at which a sheet of 2DEG forms. During simulations, all the insulating trenches are assumed to have vertical sidewalls and pass through both the entire AlGaN layer and the entire GaN one.
