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Journal of Nanomaterials
Volume 2013 (2013), Article ID 127690, 7 pages
http://dx.doi.org/10.1155/2013/127690
Research Article

Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor

1The TEPS Research Group, College of Engineering and Science, Footscray Park Campus, Victoria University, Melbourne, VIC 3011, Australia
2Department of Electrical and Computer Systems Engineering, Monash University, Melbourne, VIC 3800, Australia

Received 9 November 2012; Accepted 26 March 2013

Academic Editor: Nadya Mason

Copyright © 2013 Hatef Sadeghi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Hatef Sadeghi, Daniel T. H. Lai, Jean-Michel Redoute, and Aladin Zayegh, “Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor,” Journal of Nanomaterials, vol. 2013, Article ID 127690, 7 pages, 2013. doi:10.1155/2013/127690