Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor

Figure 1

Configuration of (a) AB (Bernal) BG with 𝐴₁𝐵₁𝐴₂𝐵₂ unit cell and in plain hopping (𝛾₀=3.14 eV) and interlayer hopping (𝛾₁=0.35 eV); (b) ABA (Bernal) TG with 𝐴₁𝐵₁𝐴₂𝐵₂𝐴₃𝐵₃ unit cell and interlayer hopping (𝛾₁=0.44 eV).

(a)

(b)