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Journal of Nanomaterials
Volume 2013 (2013), Article ID 152079, 7 pages
pH-Sensing Characteristics of Hydrothermal Al-Doped ZnO Nanostructures
1Department of Electronics Engineering, Ming Chi University of Technology, New Taipei 24301, Taiwan
2Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan
3Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan
Received 12 May 2013; Accepted 5 August 2013
Academic Editor: Tifeng Jiao
Copyright © 2013 Jyh-Liang Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
- B. P. Bergveld, “Development of an ion sensitive solid-state device for neurophysiological measurement,” IEEE Transactions on Biomedical Engineering, vol. 17, no. 1, pp. 70–71, 1970.
- M.-N. Niu, X.-F. Ding, and Q.-Y. Tong, “Effect of two types of surface sites on the characteristics of Si3N4-gate pH-ISFETs,” Sensors and Actuators B, vol. 37, no. 1-2, pp. 13–17, 1996.
- L. Bousse, H. H. van den Vlekkert, and N. F. de Rooij, “Hysteresis in Al2O3-gate ISFETs,” Sensors and Actuators B, vol. 2, no. 2, pp. 103–110, 1990.
- J.-C. Chou, J.-L. Chiang, and W. U. Chin-Lung, “PH and procaine sensing characteristics of extended-gate field-effect transistor based on indium tin oxide glass,” Japanese Journal of Applied Physics 1, vol. 44, no. 7, pp. 4838–4842, 2005.
- N. H. Chou, J. C. Chou, T. P. Sun, and S. K. Hsiung, “Differential type solid-state urea biosensors based on ion-selective electrodes,” Sensors and Actuators B, vol. 130, no. 1, pp. 359–366, 2008.
- J. van der spiegel, I. Lauks, P. Chan, and D. Babic, “The extended gate chemically sensitive field effect transistor as multi-species microprobe,” Sensors and Actuators, vol. 4, pp. 291–298, 1983.
- J.-L. Chiang, J.-C. Chou, and Y.-C. Chen, “Study of the pH-ISFET and EnFET for biosensor applications,” Journal of Medical and Biological Engineering, vol. 21, no. 3, pp. 135–146, 2001.
- L.-T. Yin, J.-C. Chou, W.-Y. Chung, T.-P. Sun, and S.-K. Hsiung, “Study of indium tin oxide thin film for separative extended gate ISFET,” Materials Chemistry and Physics, vol. 70, no. 1, pp. 12–16, 2001.
- J.-C. Chou and C.-W. Chen, “Fabrication and application of ruthenium-doped titanium dioxide films as electrode material for ion-sensitive extended-gate FETs,” IEEE Sensors Journal, vol. 9, no. 3, pp. 277–284, 2009.
- P. D. Batista and M. Mulato, “Polycrystalline fluorine-doped tin oxide as sensoring thin film in EGFET pH sensor,” Journal of Materials Science, vol. 45, no. 20, pp. 5478–5481, 2010.
- P. D. Batista and M. Mulato, “ZnO extended-gate field-effect transistors as pH sensors,” Applied Physics Letters, vol. 87, no. 14, Article ID 143508, 2005.
- P. D. Batista, M. Mulato, C. F. D. O. Graeff, F. J. R. Fernandez, and F. D. C. Marques, “SnO2 extended gate field-effect transistor as pH sensor,” Brazilian Journal of Physics, vol. 36, no. 2, pp. 478–481, 2006.
- J. C. Chou and D. J. Tzeng, “Study on the characteristics of the ruthenium oxide pH electrode,” Rare Metal Materials and Engineering, vol. 35, p. 256, 2006.
- E. M. Guerra, G. R. Silva, and M. Mulato, “Extended gate field effect transistor using V2O5 xerogel sensing membrane by sol-gel method,” Solid State Sciences, vol. 11, no. 2, pp. 456–460, 2009.
- Q. H. Li, Q. Wan, Y. J. Chen, T. H. Wang, H. B. Jia, and D. P. Yu, “Stable field emission from tetrapod-like ZnO nanostructures,” Applied Physics Letters, vol. 85, no. 4, pp. 636–638, 2004.
- Q. Zhao, H. Z. Zhang, Y. W. Zhu et al., “Morphological effects on the field emission of ZnO nanorod arrays,” Applied Physics Letters, vol. 86, no. 20, Article ID 203115, 2005.
- N. S. Ramgir, I. S. Mulla, K. Vijayamohanan et al., “Ultralow threshold field emission from a single multipod structure of ZnO,” Applied Physics Letters, vol. 88, no. 4, Article ID 042107, 2006.
- D. F. Paraguay, M. Miki-Yoshida, J. Morales, J. Solis, and L. W. Estrada, “Influence of Al, In, Cu, Fe and Sn dopants on the response of thin film ZnO gas sensor to ethanol vapour,” Thin Solid Films, vol. 373, no. 1-2, pp. 137–140, 2000.
- R.-C. Wang, C.-P. Liu, J.-L. Huang, and S.-J. Chen, “Single-crystalline AlZnO nanowires/nanotubes synthesized at low temperature,” Applied Physics Letters, vol. 88, no. 2, Article ID 023111, 3 pages, 2006.
- S. Y. Bae, H. W. Seo, and J. Park, “Vertically aligned sulfur-doped ZnO nanowires synthesized via chemical vapor deposition,” Journal of Physical Chemistry B, vol. 108, no. 17, pp. 5206–5210, 2004.
- J. Zhong, S. Muthukumar, Y. Chen et al., “Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition,” Applied Physics Letters, vol. 83, no. 16, pp. 3401–3403, 2003.
- J. Chen, W. Lei, W. Chai, Z. Zhang, C. Li, and X. Zhang, “High field emission enhancement of ZnO-nanorods via hydrothermal synthesis,” Solid-State Electronics, vol. 52, no. 2, pp. 294–298, 2008.
- P.-Y. Yang, J.-L. Wang, P.-C. Chiu et al., “PH sensing characteristics of extended-gate field-effect transistor based on al-doped ZnO nanostructures hydrothermally synthesized at low temperatures,” IEEE Electron Device Letters, vol. 32, no. 11, pp. 1603–1605, 2011.
- P.-Y. Yang, J.-L. Wang, W.-C. Tsai et al., “Field-emission characteristics of Al-doped ZnO nanostructures hydrothermally synthesized at low temperature,” Journal of Nanoscience and Nanotechnology, vol. 11, no. 7, pp. 6013–6019, 2011.
- H. W. Kim, M. A. Kebede, and H. S. Kim, “Structural, Raman, and photoluminescence characteristics of ZnO nanowires coated with Al-doped ZnO shell layers,” Current Applied Physics, vol. 10, no. 1, pp. 60–63, 2010.
- S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, NY, USA, 2nd edition, 1981.
- X. T. Hao, J. Ma, D. H. Zhang et al., “Thickness dependence of structural, optical and electrical properties of ZnO:Al films prepared on flexible substrates,” Applied Surface Science, vol. 183, no. 1-2, pp. 137–142, 2001.
- H. Kim, J. S. Horwitz, G. Kushto et al., “Effect of film thickness on the properties of indium tin oxide thin films,” Journal of Applied Physics, vol. 88, no. 10, pp. 6021–6025, 2000.
- S. Al-Hilli and M. Willander, “The pH response and sensing mechanism of n-type ZnO/electrolyte interfaces,” Sensors, vol. 9, no. 9, pp. 7445–7480, 2009.
- R. L. Van Meirhaeghe, F. Cardon, and W. P. Gomes, “A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces,” Journal of Electroanalytical Chemistry, vol. 188, no. 1-2, pp. 287–291, 1985.
- S. Jamasb, S. Collins, and R. L. Smith, “A physical model for drift in pH ISFETs,” Sensors and Actuators B, vol. B49, no. 1-2, pp. 146–155, 1998.