Table 1: Properties of ZnO films with different dopants prepared by PLD.

DopantsOptimum content in target (%)Thickness (nm)Resistivity (Ω·cm)Transmittance (%)Reference

Al25004.5 × 10−488%[35]
Ga52008.12 × 10−4>90%[22]
In40>10004.02 × 10−4>85%[36]
F22004.83 × 10−4>90%[25]
Si2~1506.2 × 10−4~80%[37]