Annealing Effect on the Thermoelectric Properties of Bi2Te3 Thin Films Prepared by Thermal Evaporation Method
Figure 7
FE-SEM cross sectional photographs: (a) as-deposited Bi2Te3 thin film at the substrate temperature of 150°C; (b), (c), (d), and (e) thin films annealed at 100°C, 150°C, 200°C, and 250°C for 60 min, respectively.
