215613.fig.001a
(a)
215613.fig.001b
(b)
215613.fig.001c
(c)
215613.fig.001d
(d)
Figure 1: (a) Generic structure of a QD-based memory device, consisting of a layer of self-organized quantum dots embedded into an MODFET structure made of a large band gap material. (b) Storage of information requires an emission and a capture barrier. (c) Writing operation. (d) Erasing operation.