Table 1: Electronic properties and storage times at 300 K for various QD material systems. The bold entries are theoretical predictions based on 8-band-k·p calculations or estimations from the band offsets.

MaterialTypeE loc (meV) (cm2)Storage time at (300 K)Reference

Ge/SiHole350*1·10−130.1 µs[16]
InAs/GaAsElectron951·10−110.4ps[17]
InAs/GaAsElectron160*10−11 to 10−100.1 ps[18, 19]
InAs/GaAsElectron2902·10−14200 ns[20]
InAs/GaAsHole2107·10−141 ns[20]
InAs/Al0.6Ga0.4AsHole5607·10−155 ms[21]
InAs/ AsHole7104·10−151.6 s[22]
GaSb/GaAsHole3371·10−1310 ns[23]
GaSb/GaAsHole4501·10−121 µs[15]
GaSb/GaAsHole4607·10−12100 ns[12]
GaSb/GaAsHole7605·10−112 ms[12]
GaSb/Al0.1Ga0.9AsHole6701·10−122 ms[24]
GaSb/ AsHole8005·10−1280 ms[12]
InP/Ga0.5In0.5PElectron2201·10−80.04 ps[25]
In0.25Ga0.75As/GaAs/GaPHole489*2·10−133 µs[26]
GaSb/ AsHole~1250 50 h to 100 yr[12]
GaSb/GaPHole~1400 1 yr to 100 k yr[27]
GaSb/AlPHole~1900 1 G yr to 100 T yr[27, 28]
GaSb/AlSb ** Electron~1200 36 h to 40 yr[28]
GaN/AlNElectron~2000 10 G yr to 10 P yr[29]
InAs/AlSb ** Electron~2150 100 T yr to 1 E yr[28]

The values marked with an asterisk (*) are not localization energies but ensemble activation energies. (**) These heterostructures do not facilitate QDs, but they form unstrained ordinary quantum wells.