The Liquid Sensor Using Thin Film Bulk Acoustic Resonator with C-Axis Tilted AlN Films

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="245095.fig.002a" src="https://static.hindawi.com/articles/jnm/volume-2013/245095/figures/245095.fig.002a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>Substrate cleaned by RCA process</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="245095.fig.002b" src="https://static.hindawi.com/articles/jnm/volume-2013/245095/figures/245095.fig.002b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b><svg height="15.65" id="M5" style="vertical-align:-3.3907pt" version="1.1" viewbox="0 0 39.075001 15.65" width="39.075001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> deposited by LPCVD</td></tr></table></td></tr><tr class="fig-image" id="c"><td><img alt="245095.fig.002c" src="https://static.hindawi.com/articles/jnm/volume-2013/245095/figures/245095.fig.002c.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(c) </b><svg height="15.65" id="M6" style="vertical-align:-3.3907pt" version="1.1" viewbox="0 0 39.075001 15.65" width="39.075001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> etched by RIE</td></tr></table></td></tr><tr class="fig-image" id="d"><td><img alt="245095.fig.002d" src="https://static.hindawi.com/articles/jnm/volume-2013/245095/figures/245095.fig.002d.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(d) </b>Bottom electrode deposited by DC sputter</td></tr></table></td></tr><tr class="fig-image" id="e"><td><img alt="245095.fig.002e" src="https://static.hindawi.com/articles/jnm/volume-2013/245095/figures/245095.fig.002e.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(e) </b>AIN deposited by RF sputter</td></tr></table></td></tr><tr class="fig-image" id="f"><td><img alt="245095.fig.002f" src="https://static.hindawi.com/articles/jnm/volume-2013/245095/figures/245095.fig.002f.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(f) </b>AIN etched </td></tr></table></td></tr><tr class="fig-image" id="g"><td><img alt="245095.fig.002g" src="https://static.hindawi.com/articles/jnm/volume-2013/245095/figures/245095.fig.002g.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(g) </b>Top electrode deposited by DC sputter </td></tr></table></td></tr><tr class="fig-image" id="h"><td><img alt="245095.fig.002h" src="https://static.hindawi.com/articles/jnm/volume-2013/245095/figures/245095.fig.002h.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(h) </b>Si etched by KOH</td></tr></table></td></tr></table>

<table>The fabrication processes for the dual-mode TFBAR devices.</table>

Journal of Nanomaterials

fig2

Figure 2

Figure 2: The Liquid Sensor Using Thin Film Bulk Acoustic Resonator with C-Axis Tilted AlN Films 