Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate

<table>Scanning electron micrograph of vertically aligned carbon nanotubes (VACNTs) grown on a silicon wafer using the  chemical vapor deposition approach.</table>

Journal of Nanomaterials

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Figure 1

Figure 1: Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate 

Figure 1 | Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate 