Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate

<table>Experimental setup for DMA testing; (a) sample in three-point bending at a prespecified 10 <i>μ</i>m amplitude and 1 Hz oscillation frequency, and (b) energy dissipation caused by the entanglement of VACNTs on silicon wafer substrate during cyclic flexural deformation (inset: digital microscope image of VACNTs on silicon wafer substrate).</table>

Journal of Nanomaterials

fig2

Figure 2

Figure 2: Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate 

Figure 2 | Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate 