Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate

Figure 3

DMA results for three specimens each of pure Si wafer and VACNT-Si (processed at 820°C) analyzed over a temperature range from ambient (30°C) to 120°C; ((a) and (b)) the required line force 𝐹 at midspan to achieve 10 μm amplitude; ((c) and (d)) the “apparent’’ storage modulus, 𝐸^′; and ((e) and (f)) associated damping loss factor, tan𝛿.

(a)

(b)

(c)

(d)

(e)

(f)