Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate

<table>High strain rate response of pure Si wafer and VACNT-Si (processed at 820°C) over the strain rate range of 4600/s to 7500/s (shown only up to 0.2 strain).</table>

Journal of Nanomaterials

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Figure 4

Figure 4: Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate 

Figure 4 | Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate 