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Journal of Nanomaterials
Volume 2013 (2013), Article ID 383867, 7 pages
http://dx.doi.org/10.1155/2013/383867
Research Article

Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD

1State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China
2Graduate University of Chinese Academy of Sciences, Beijing 100049, China
3Energy Materials Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China

Received 3 October 2012; Revised 28 December 2012; Accepted 4 January 2013

Academic Editor: Masayuki Nogami

Copyright © 2013 D. Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The nanoscale Si films with the thickness of 2 nm, 5 nm, 10 nm, and 20 nm were deposited by plasma ion assisted deposition (PIAD) on glass substrate, in order to investigate the initial stage and the nucleation and growth mechanism of the Si film. The atomic force microscopy (AFM) was used to investigate the surface topography of the as-deposited Si film. The initial nucleation and growth process of the film was described. The continuous film had been already formed when the film thickness was 10 nm. The growth of the deposited Si film accorded with the Volmer-Weber growth mode.