Wearout Reliability and Intermetallic Compound Diffusion Kinetics of Au and PdCu Wires Used in Nanoscale Device Packaging

Table 1

Characteristics of the Weibull plots of various reliability tests (Au and PdCu wires used in 110 nm device).

Wire type	Test type	Test conditions	𝑡first (hr)	𝑡50	𝑡63.2; (η)	𝛽
PdCu	HAST (3.6 V Bias)	130°C, 85% RH	1817	3593	3849	5.06
Au	HAST (3.6 V Bias)	130°C, 85% RH	1553	2584	2752	4.96
PdCu	UHAST (Unbiased)	130°C, 85% RH	3000	8971	10124	3.44
Au	UHAST (Unbiased)	130°C, 85% RH	4000	9222	10189	2.82
PdCu	TC	−40°C to 150°C	7000	12544	13301	5.79
Au	TC	−40°C to 150°C	6000	11982	12922	4.72
PdCu	HTSL	150°C, 175°C, 200°C	N/A	N/A	N/A	N/A
Au	HTSL	150°C, 175°C, 200°C	N/A	N/A	N/A	N/A