UV Enhanced Oxygen Response Resistance Ratio of ZnO Prepared by Thermally Oxidized Zn on Sapphire Substrate
Figure 3
Resistance transients of ZnO resistor device measured at different O2 pressures under 54.5 μW cm−2 UV light illumination. The inset shows the current-voltage behavior in the dark (D) and under UV light illumination (L) at 760 Torr.
