An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors

Figure 2

The surface potential along the drain side channel length for three different values of drain-source voltages with 𝑡_ox=1 nm, 𝑁_𝐷=1×10²⁰cm⁻³, and 𝑛_𝑖=5×10¹⁷cm⁻³. The solid lines represent modelling results and symbols represent simulation results of FlexPDE.