Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode

Table 1

Electrical properties of the annealed i-ZnO, and cosputtered ITO-ZnO and ITO films.

Sample	Concentration (/cm^3)	Mobility (cm/Vs)	Resistivity (Ω cm)
Annealed 𝑖-ZnO	−7.4 × 10^15	69.7	3.3 × 10^2
ITO	−5.5 × 10^20	10.7	1.1 × 10^−3
ITO-ZnO	−1.0 × 10^21	21.4	2.9 × 10^−4