About this Journal Submit a Manuscript Table of Contents
Journal of Nanomaterials
Volume 2013 (2013), Article ID 568175, 8 pages
http://dx.doi.org/10.1155/2013/568175
Research Article

Electrical Characterization of Nanopolyaniline/Porous Silicon Heterojunction at High Temperatures

1Department of Optical Science and Technology, The University of Tokushima, 2-1 Minamijosanjima-cho, Tokushima, Tokushima 770-8506, Japan
2Energy Materials Laboratory, Physics Department, School of Sciences and Engineering, The American University in Cairo, New Cairo 11835, Egypt

Received 28 June 2012; Revised 21 January 2013; Accepted 29 January 2013

Academic Editor: Xuedong Bai

Copyright © 2013 Salah E. El-Zohary et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Nanopolyaniline/p-type porous silicon (NPANI/PSi) heterojunction films were chemically fabricated via in situ polymerization. The composition and morphology of the nanopolymer were confirmed using Fourier transform infrared, scanning electron microscopy, UV-visible, and transmission electron microscopy techniques. The results indicated that the polymerization took place throughout the porous layer. The I-V measurements, performed at different temperatures, enabled the calculation of ideality factor, barrier height, and series resistance of those films. The obtained ideality factor showed a nonideal diode behavior. The series resistance was found to decrease with increasing temperature.