Electrical Characterization of Nanopolyaniline/Porous Silicon Heterojunction at High Temperatures

Table 1

Saturation current (𝐼₀), barrier height (Φ_𝐵), ideality factor (𝜂), and 𝑅_𝑠 factor for NPANI/PSi heterojunction.

𝑇  (K)	𝐼0  (A)	𝜂	Φ𝐵  (eV)	𝑑𝑉/𝑑(ln𝐼)
				𝜂	𝑅𝑠  (kΩ)
298	8.52782 × 10^−8	5.45	0.56	4.47	28.8
323	1.17942 × 10^−7	3.95	0.60	3.34	16.8
348	1.83184 × 10^−7	3.33	0.64	2.78	10.2
373	2.91448 × 10^−7	2.80	0.67	2.24	5.81