Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications
Figure 14
Carbon nanotube TFT’s RF characteristic. (a) Measured S-parameters from 10 MHz to 1 GHz. The transistor is biased at = 0 V and = −5 V for optimal performance. (b) Intrinsic current gain , and maximum available gain derived from the S-parameters by Wang et al. [12].
