627215.fig.0014a
(a)
627215.fig.0014b
(b)
Figure 14: Carbon nanotube TFT’s RF characteristic. (a) Measured S-parameters from 10 MHz to 1 GHz. The transistor is biased at = 0 V and = −5 V for optimal performance. (b) Intrinsic current gain , and maximum available gain derived from the S-parameters by Wang et al. [12].