Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

Figure 3

View of VLSI compatible Metallic CNT Removal (VMR) structure. (a) Top view. (b) Cross-sectional view. (c) SEM image (top view). The high voltage is applied to the interdigitated electrodes. The silicon backgate with an appropriate voltage turns off the semiconducting CNTs. Metallic CNTs between digitation will breakdown [28].