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Journal of Nanomaterials
Volume 2013 (2013), Article ID 650457, 8 pages
http://dx.doi.org/10.1155/2013/650457
Research Article

Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices

Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor, Malaysia

Received 4 June 2013; Revised 6 August 2013; Accepted 14 August 2013

Academic Editor: Ping Xiao

Copyright © 2013 Meng Chuan Lee and Hin Yong Wong. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Meng Chuan Lee and Hin Yong Wong, “Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices,” Journal of Nanomaterials, vol. 2013, Article ID 650457, 8 pages, 2013. doi:10.1155/2013/650457