The Observation of Electrical Hysteric Behavior in Synthesized V₂O₅ Nanoplates by Recrystallization

Figure 5

(a) Current-voltage characteristics of V₂O₅ nanoplates devices for different annealing temperatures from 250°C to 600°C except 400°C. Inset shows the schematic diagram of measured electronic devices V₂O₅ nanoplates and Au electrodes. (b) Plot of measured source-drain current as a function of temperature with fixed voltage of 1 V. (c) A current-voltage characteristic for the annealing temperature of 400°C.

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