Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

Table 1

Device model input and output parameter at 𝑉_𝐺=1 V.

Parameter	CNT	MOSFET
Type	Zigzag	NMOS
Structure	Q1D	Q2D
Gate insulator thickness, 𝑡ox	1.1 nm	1.1 nm
Channel length, 𝐿	60 nm	45 nm
Channel width, 𝑊	67.5 nm	90 nm
Channel area, 𝐴	4.05×10^−15 m^2	4.05×10^−15 m^2
Tube diameter, 𝑑	1.5437 nm	—
Chiral vector (𝑛, 𝑚)	(20, 0)	—
Maximum electric field, 𝐸𝑚	0.75 𝐸𝑚Si	𝐸𝑚Si
Maximum current, 𝐼𝑑max	59.43 µA	65.2 µA
Carrier density, 𝐼𝑑max/(𝑑 or 𝑊)	42.8 µA/nm	0.8 µA/nm
DIBL	39.41 mV/V	56.23 mV/V
Subthreshold swing, SS	74.44 mV/dec	32.37 mV/dec
On-off ratio	9.2×10^3	3.8×10^3