Sub-15 nm Silicon Lines Fabrication via PS-b-PDMS Block Copolymer Lithography
Figure 1
Top-down SEM images of self-assembled PS-b-PDMS on top of PS-OH anchored silicon substrates after treatment with CF4 + O2 plasma. The plasma removes upper PDMS wetting layer and part of the PS matrix. All samples were annealed under toluene environment: (a) at 298 K for 3 h; (b) at 298 K for 6 h; (c) at 298 K for 9 h; (d) at 298 K for 12 h; (e) at 323 K for 3 h; (f) at 323 K for 6 h; (g) at 323 K for 9 h; and (h) at 323 K for 12 h.
