Sub-15 nm Silicon Lines Fabrication via PS-b-PDMS Block Copolymer Lithography
Figure 2
Cross-sectional SEM images of cylindrical structure of PS-b-PDMS after solvothermal annealing at 323 k for 3 h. No prior PDMS etch was done and most probably the thin top layer is the expected low surface energy PDMS wetting layer. (a) Multilayer, (b) bilayer, and (c) monolayer regions of PS-b-PDMS patterns. (d) High resolution cross-sectional image of cylindrical structures.
