Research Article
Research of Dielectric Breakdown Microfluidic Sampling Chip
Table 1
Coupling parameters of ICP.
| ICP P/W | 700 | RF RP/W | Passivation: 10 | Etching: 25 | Gas flow/sccm | Passivation: C4F8 = 100 | Etching: SF6 = 100 | Time/s | Passivation: 10 | Etching: 10 | Cycle number | 30 | Helium pressure/Torr | 10 | Total gas pressure/mTorr | 40 | Substrate temperature/°C | 10 |
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