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Journal of Nanomaterials
Volume 2014 (2014), Article ID 203963, 5 pages
http://dx.doi.org/10.1155/2014/203963
Research Article

Novel BCD Process Platform with Integrated Self-Extracted JTE Trench Technology for EL Drivers ICs

1The 58th Research and Scientific Institute, China Electronic Technology Group Corporation, Wuxi 214035, China
2Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China

Received 25 March 2013; Accepted 7 August 2013; Published 2 January 2014

Academic Editor: Hua-Liang Zhang

Copyright © 2014 Wei Huang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A low cost silicon BCD technology in place of high cost SOI BCD technology for monolithic integrated EL driver ICs application is put forward. Several key technologies are presented. An advanced SEJTET termination technology was designed instead of the conventional PIOS isolation to obtain smaller chip area and protect HVICs from the occurrence of di/dt effect under PWM operation. Novel VDMOS/Resurf LDPMOS devices were developed compatibly to obtain the lowest , improve silicon utilization, and simplify key process steps.